unisonic technologies co., ltd 2sa1700 pnp epitaxial silicon transistor www.unisonic.com.tw 1 of 3 copyright ? 2012 unisonic technologies co., ltd qw-r213-011.b high voltage driver application ? features * high breakdown voltage. * excellent h fe linearity. ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 2SA1700L-X-TM3-T 2sa1700g-x-tm3-t to-251 b c e tube 2sa1700l-x-tn3-r 2sa1700g-x-tn3-r to-252 b c e tape reel 2sa1700l-x-tn3-t 2sa1700g-x-tn3-t to-252 b c e tube note: pin assignment: b: base c: collector e: emitter
2sa1700 pnp epitaxial silicon transistor unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r213-011.b ? absolute maximum rating ( t a =25 ) parameter symbol ratings unit collector-base voltage v cbo -400 v collector-emitter voltage v ceo -400 v emitter-base voltage v ebo -5 v collector current i c -200 ma collector current (pulse) i cp -400 ma power dissipation p d 1 w 10 (t c =25 ) w junction temperature t j 150 storage temperature t stg -55 ~ +150 note 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (t a =25 , unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage bv cbo i c = -10 a, i e =0 -400 v collector-emitter breakdown voltage bv ceo i c = -1ma, i b =0, r be = -400 v emitter-base breakdown voltage bv ebo i e = -10 a, i c =0 -5 v collector cutoff current i cbo v cb = -300v, i e =0 -0.1 a emitter cutoff current i ebo v eb = -4v, i c =0 -0.1 a dc current transfer ratio h fe v ce = -10v, i c = -50ma 60 200 collector-emitter satu ration voltage v ce ( sat ) i c = -50ma, i b = -5ma -0.8 v base-emitter satura tion voltage v be ( sat ) i c = -50ma, i b = -5ma -1.0 v output capacitance c ob v cb = -30v, f=1mhz 5 pf reverse transfer capacitance c re v cb = -30v, f=1mhz 4 pf gain-bandwidth product f t v ce = -30v, i c = -10ma 70 mhz turn-on time t on see test circuit 0.25 s turn-off time t off see test circuit 5 s
2sa1700 pnp epitaxial silicon transistor unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r213-011.b ? classification of h fe rank d e range 60-120 100-200 ? test circuit (unit : (resistance : ? , capacitance : f)) input output -10i b1 = 10i b2 =ic= -50ma r l =3k ,r b =200 at ic= -50ma p w =20 s duty cycle 1% i b1 i b2 r l 50 v be = 1v 100 + 470 + v r r b v cc = -150v utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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